发明名称 ELECTRON RAY EXPOSURE SYSTEM
摘要 PURPOSE:To increase the drawing speed and the correctness of pattern, by setting the electron beam diameter depending on the required accuracy every sectioned region, in IC patterning or the like. CONSTITUTION:The exposed object 22 consists of the pattern region 18 specifying the IC construction and the pattern region 56 recording the region in which no accuracy is requested, and the electron beam diameter from the electron gun 2 is respectively set to each region, and patterning is made with X and Y directional scanning. For example, to the region 58, the minimum drawing video element unit is taken as 0.5 mum square and it is scanned with the electron beam of 0.5 mum phi in diameter, and to the region 56, the minimum drawing video element is taken as 1.0 mum square and scanning is made with the electron beam of 1.0 mum phi in diameter. Further, the variable control for the beam diameter is made with the bias voltage adjustment between the cathode 40 of electron gun and the wenert 38.
申请公布号 JPS5489579(A) 申请公布日期 1979.07.16
申请号 JP19770159919 申请日期 1977.12.27
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 TAKIGAWA TADAHIRO
分类号 H01J37/305;G03F1/00;G03F1/76;G03F1/78;H01L21/027;H01L21/26 主分类号 H01J37/305
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