MOS FIELD EFFECT TYPE TRANSISTOR,申请号JP19770159660-传众专利搜索

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发明名称	MOS FIELD EFFECT TYPE TRANSISTOR
摘要
申请公布号	JPS5489587(A)	申请公布日期	1979.07.16
申请号	JP19770159660	申请日期	1977.12.27
申请人	FUJITSU LTD	发明人	INAYOSHI KATSUYUKI
分类号	H01L29/78;H01L29/06	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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