| 摘要 |
<p>PURPOSE:To obtain a mask ideally suited for formation of fine mask patterns by disposing spacers at end edges of the absorber pattern forming surface of a soft X-ray transmission layer provided with X-ray absorber patterns and providing reinforcing supporting beams composed of Si to the end edges on the opposite surface corresponding thereto. CONSTITUTION:After SiO2 film 2 are deposited on both surfaces of a Si monocrystalline substrate 1 having a thickness necessary for supporting an X-ray transmission layer 5, a Si3N4 film 3 is grown on one surface. Next, patterns of a resist film 4 are provided on this surface and with these as a mask, etching is performed to let the laminated films 2' and 3' of the specified patterns be remained. Thereafter, the film 2 on the opposite surface is removed and an X-ray transmission layer 5 composed of the SiO2 film sandwiched by Si3N4 films is deposited over the entire surface of the exposed substrate 1 and is then covered with a Ti thin film 6 and an Au thin film 7. Next, X-ray absorber patterns 9 composed of Au are formed thereon and thick spacers 11 composed of Ni, Cu or other are provided encircling these. The substrate is then etched from the back side to let the supporting beams 1' thru 3' composed of the substrate and films be remained in opposition to the spacers 11.</p> |
