| 摘要 |
1,130,711. Semi-conductor devices; printed Circuits. TEXAS INSTRUMENTS Inc. 26 Jan., 1966 [27 Jan., 1965; 26 Feb., 1965], No. 3522/66. Headings H1K and H1R. [Also in Division C7] An electrically conductive connection is made between two conductive regions in a compound semi-conductor body or between one such region and a surface of the body by locally heating the intervening part of the body to vaporize a more volatile element of the compound leaving a hole with a lining of one or more conductive less-volatile elements of the compound constituting the connection. Suitable semi-conductor compounds are specified A III Bv and An B VI compounds, A I B VI , A I B VII and rare earth compounds, lead sulphide and mixtures of these compounds with germanium or silicon. While electron bombardment is the preferred form of localized heating, laser beams and electric arcs or sparks are also suitable. The connection may be reinforced by plating gold on a surface in which the hole is to be formed so that it melts and is drawn into the hole. The processes may be used in conjunction with other electron beam techniques, such as the formation of superficial resistors or conductive tracks by bombarding the surface with a lower intensity beam. The resistance of conductive tracks so formed is preferably reduced by electroless plating with nickel, which is preferentially deposited on the electron damaged material. Where both kinds of track are required the bombardment is controlled to make all the tracks resistive, and the surface is masked during a subsequent electroless plating process except for the tracks to be rendered conductive. Alternatively the resistive tracks are formed on completion of the plated conductive tracks. A particularly important use of the described process is the interconnection of circuit elements formed at different levels in a monolith of semiinsulating gallium arsenide. |
