| 摘要 |
PURPOSE:To perform light illumination display, by utilizing the change for the photo absorption with the change of the forbidden band width of semiconductor due to electric field. CONSTITUTION:The n and p type of GaAlAs semiconductor films are alternately laminated and each layer is connected at its end. When the depletion layer is formed by back biasing the pn junction, the photo wave performance transmitting through the pn junction is changed. In this case, the color is changed. The filter 9 transmitting only the wave lenght light around the absorbing end at voltage application is placed at the display plane, and the golden film reflecting mirror 10 is provided at the rear surface. The filter transmitting light around the absorption end only at non voltage is used and the pn junction is back biased, then the display surface is dark. With this constitution, the display can be turned on or off in high speed. |
