| 摘要 |
<p>PURPOSE:To form well spaces for separation of a wafer into individual elements to improve yield, by forming ohmic electrode metal thinly on the part other than separation parts of the semiconductor wafer and causing a thick-film good-thermal conductive metallic layer to adhere onto the metal above and scribing it. CONSTITUTION:P-type AlAs layer 2 is provided on N-type GaAs substrate 1 to make a semiconductor laser wafer, and GaAs layer 3 is grown on the surface of layer 2 and is subjected to the mesa-type stripe process for current constriction. Next, a metal mask corresponding to stripe-shaped space 4 for separation is used on mesa-structure layer 3, and a Cr-Au layer is evaporated onto the part other than space 4 for separation, thereby making P side electrode 5. After that, mask 6 of a photo resistor film is used to perform electrolytic plating, and Au layer 7 is formed on electrode 5. Then, film 6 is removed, and the part where space 4 for separation is provided is scribed by cleavage, thereby producing a stripe-shaped laser element.</p> |
