发明名称 VAPORRPHASE GROWTH METHOD OF COMPOUND SEMICONDUCTOR
摘要 PURPOSE:To make the consumption from a source surface uniform to avoid the change of a growing speed at a repeated used, by arranging a GaAs substrate and a source boat in a model vapour-phase growing unit and making reaction gas into shower to blow it onto the source boat when reaction gas is led into this unit. CONSTITUTION:Source boat supporting jig 20 is arranged in a reaction tube storing a GaAs substrate which will be grown. Boat 21 equipped with partitions is arranged on the bottom face of this supporting jig 20, and source 22 is charged in each section. Then, supply tube 24 for reaction gas 23 is arranged above the source through the side wall of supporting jig 20. Further, one or plural holes 25 are provided on the lower face of supply tube 24 correspondingly to each section of boat 21, and reaction gas 23 is jetted in shower downward from holes. Thus, the total area of the source is not changed and the height of the source is reduced according to the consumption of source 22, so that the growing speed to the GaAs substrate can be made uniform.
申请公布号 JPS5488071(A) 申请公布日期 1979.07.12
申请号 JP19770156783 申请日期 1977.12.26
申请人 FUJITSU LTD 发明人 NOGAMI MASAHARU
分类号 C30B25/14;C23C16/448;C30B29/40;H01L21/205 主分类号 C30B25/14
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