| 摘要 |
<p>Positive etch-resistant masks are made using a radiation-sensitive layer of un-crosslinked (meth)acrylate polymers with side-chains of varied length, pref. copolymers from >=2 monomers. Before irradiation, little or no pre-bake is given in dry inert gas atmos. wt. just above the Tg temp To dry and stabilise the layer and improve its adhesion, without causing crosslinking. Used in UV, X-ray or electron beam lithography in semi-conductor technology, for making printed circuits, etc. with high resolution. The coatings have high sensitivity to radiation and good application properties to a variety of substrates e.g. coating, adhesion, developing, etch-resistance and removal after the masking process.</p> |
