| 摘要 |
<p>PURPOSE:To prevent the malfunction of automatic clear operation by providing the pull up depletion type MIS FET high resistor located between the gates and the power supply terminals of the enhancement type MISFETQ2 and MISFETQ1. CONSTITUTION:The voltage division circuit by depletion type MISFET or diffusion resistor and the source follower circuit taking the enhancement type MISFETQ1 as drive means are provided. Further, the enhancement type MISFETQ2 connected to the diode in forward connection between the voltage dividing output and the gate of MISFETQ1 and the high resistor for pull up depletion type MISFETQ located between the gate of MISFETQ1 and the power supply Vdd terminal, are located. Thus, the source follower output Vo is used as the reference signal to form automatic clear signal, allowing to prevent the malfunction of automatic clear operation.</p> |
