Complementary metal-ferroelectric semiconductor transistor structure and a matrix of such transistor structure for performing a comparison

摘要

A complementary metal-ferroelectric-semiconductor transistor structure (MFST) in which an n-channel MFST is electrically coupled to a p-channel MFST in complementary fashion with the source of the n-channel MFST connected to the drain of the p-channel MFST and the drain of the n-channel MFST connected to the source of the p-channel MFST. The memory element is controlled in response to a polarizing voltage, and erasing voltage, a reference signal, and input signals such that the input signals are compared with respect to the reference signal. A matrix of memory elements arranged in rows and columns is also described with each of the memory elements comprised of a complementary MFST structure.