发明名称 |
Integrated circuit having complementary bipolar transistors |
摘要 |
An integrated circuit having one vertical and one lateral bipolar transistor, including a semiconductor substrate, a deposited semiconductor layer, and connection tracks consisting of portions of the semiconductor layer over a dielectric, other portions of the semiconductor layer being used to form contacts for certain active zones of the transistors.
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申请公布号 |
US4160989(A) |
申请公布日期 |
1979.07.10 |
申请号 |
US19780887646 |
申请日期 |
1978.03.17 |
申请人 |
U.S. PHILIPS CORPORATION |
发明人 |
DE BREBISSON, MICHEL;DECROUEN, JEAN-MICHEL;EDLINGER, WOLFGANG F. J.;BIET, JEAN-PIERRE H. |
分类号 |
H01L21/768;H01L23/52;H01L27/02;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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