| 摘要 |
A circuit arrangement at least partially embodied in a collector-diffusion-isolation (CDI) type device, in a semiconductor body comprising a thin layer initially wholly of one conductivity type on a substrate of the same conductivity type, has at least one component comprising a modification of previously known CDI type constructions i.e. with a combination of regions of the opposite conductivity type comprising a buried layer at the interface between the thin layer and the substrate, and an isolation barrier for the component extending through the thin layer to contact the buried layer, the modification comprising providing at least one outer annular region of the opposite conductivity type, adjacent to the surface of the thin layer remote from the substrate, and uniformly spaced from the combination of regions, there being a resistive component part between the outer annular region and the combination of regions, such that in the operation of the circuit arrangement, the device does not breakdown when a potential difference up to substantially twice the breakdown potential of the outer P-N junction of a component of any previously known CDI type consturction, and at least of 10 volts, is applied across the device, and/or controlled breakdown of the component of the device of the modified CDI type contruction takes place, but the breakdown current, flowing between regions of the device beyond the component and the combination of regions of the component, being reduced by the presence of the resistive part between the outer annular region and the combination of regions of the component.
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