| 摘要 |
PURPOSE:To shorten a delay time with the saturation of a transistor prevented by using a PN junction formed in polycrystal Si as a clamp diode and by making it serve for a Schottky diode. CONSTITUTION:On N<+>-type Si substrate 11, N-type layer 12 is epitaxy-grown and covered with a SiO2 film and an opening is made, thereby forming P-type base region 13 of NPN transistor Tr34 and P-type emitter region 13' of model PNP transistor Tr35 as an injector. Next, N<+>-type collector region 14 of Tr34 is provided into region 13, SiO2 near the junction is removed and P-type polycrystal Si film 16 is adhered here and heat-treated to generate polycrystal Si diode 16'' on region 14. In this way, diodes 31 to 33 of polycrystal Si are connected between the collector and base of NPN switching Tr34 constituting the circuit of I<2>L and those diodes are operated as Schottky diodes, thereby shortening the delay time of I<2>L. |
