发明名称 METHOD OF FABRICATING THIN FILM
摘要 Preparation of thin substantially pin-hole-free films of a semiconducting sulphide, sulphoselenide, selenide or telluride is achieved by the deposition of a film of the semiconductor and the application of heat preferentially to one surface of the film to establish a temperature differential between the surfaces of the film. The films may be employed in solid state devices and particularly in solar cells. In a solar cell the film (2), deposited on an electrically conducting substrate (1), forms a junction (4) with a semi-conductor (3), which is in contact with an electrode (5).
申请公布号 JPS5485670(A) 申请公布日期 1979.07.07
申请号 JP19780140403 申请日期 1978.11.14
申请人 ICI LTD 发明人 UIRIAMU ANDORIYUU BAAROO;KEISU JIYOONZU;MOORISU ROODESU;DEEBITSUDO JIEEMUSU ROORII;FURANSHISU REIMONDO SHIYAARIKA;EDOWAADO WATOKIN UIRIAMUSU
分类号 C01G1/12;C01B17/20;C01B19/04;C23C18/12;C25D7/00;C25D13/02;H01L21/208;H01L21/318;H01L21/365;H01L21/368;H01L21/428;H01L21/477;H01L21/479;H01L31/0336;H01L31/18;H01L51/30;H01L51/42 主分类号 C01G1/12
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