HIGH RESISTANCE CERMET FILM AND METHOD OF MAKING THE SAME

摘要

A cermet film which includes metal particles having an average diameter of 30 .ANG. to 120 .ANG. and a ceramic insulator, with the volume percent of the metal particles being no greater than that at which the percolation threshold appears. The cermet film is formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a hydrogen atmosphere at a temperature over 750.degree. C whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.