发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To secure an assured and safe detection for the characteristics by giving a touch between the glass material protective film covering the PN junction and the liquid or the gas to impair the PN junction. CONSTITUTION:The mesa groove is provided to the element, and the exposed area of the PN junction is covered with the glass material protective film featuring the expansion coefficient which differs slightly from that of the semiconductor. Then the element is soaked for 5-15 minutes into the solution containing 2% of the water solution of 28% NH3, and then washed with water and dried. The leak current of the element containing the micro cracks is increased, thus the characteristics cannot be recovered through the annealing of about 200 deg.C. Thus, an effective selection becomes possible.
申请公布号 JPS5482977(A) 申请公布日期 1979.07.02
申请号 JP19770149950 申请日期 1977.12.15
申请人 发明人
分类号 H01L21/66;H01L21/56;H01L23/29;H01L23/31 主分类号 H01L21/66
代理机构 代理人
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