| 摘要 |
PURPOSE:To improve frequency characteristics with drain resistance reduced by selectively providing openings to an insulating film formed between two gate regions and by shortening the source-drain distance by diffusion-forming drain contact parts from openings. CONSTITUTION:On semiconductor substrate 11 where a source is formed, epitaxial layer 12 is grown to diffusion form a plural number of regions 13 as injectors and gates. Between two out of regions 13, SiO2 film 15 is provided, which is covered with deposited SiO2 film 16 and then separated into two films 15 by being etched. Between separated films, impurities are diffused into layer 12 to form drain region 14, where Al electrode 17 is adhered and drain terminal D1 is fitted, and to each regions 13, Al electrode 17 is adhered and gate electrode G is fitted as well. The electrostatic induction transistor logic is constituded in this way and applying a gate bias in the forward direction reduces its depletion layer to allow a current to flow from the source to drain, so that the product power and delay time will improve. |
