发明名称 MEMORY CIRCUIT
摘要 PURPOSE:To obtain a memory circuit which reduces the number of the input terminal and is also suited to the semiconductor integrated circuit device which can secure the high-speed performance, by providing the discriminating circuit which performs the quadruple identification of the input signal to select the address input signal. CONSTITUTION:Signal AO featuring the quadruple level is applied from the input terminal to 1st discriminator 4 featuring high potential threshold VRefa, 2nd discriminator 6 featuring low potential threshold VRefb and to 3rd discriminator 5 featuring middle potential threshold VRefo between discriminator 4 and 6 respectively. And the binary signal is delivered to the output of each of discriminators 4-6. The operation of discriminator 4 and 6 can be controlled complementarily by the output of discriminator 5, and the signal which discriminated the quadruple value of signal AO is delivered to the output of discriminator 4 and 6. Thus, the circuit is used as the input circuit which carries out the control for the memory circuit within the semiconductor integrated circuit device.
申请公布号 JPS5482134(A) 申请公布日期 1979.06.30
申请号 JP19770149225 申请日期 1977.12.14
申请人 HITACHI LTD 发明人 KAWAMOTO HIROSHI
分类号 G11C11/413;G11C11/412;G11C11/417;G11C11/56 主分类号 G11C11/413
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