| 摘要 |
PURPOSE:To give versatility to the logic function by adding the NOR logic newly to the AND and NOT logics which are all provided on the same semiconductor substrate forming the electrostatic inductive transistor logic. CONSTITUTION:N-type layer 12 is epitaxial-grown on N<+>-type semiconductor sub- strate 11, and then P-type region 13a and 13b to become injectors later, divided P-type gate region 13c and 13d plus N<+>-type drain region 14 positioning the above mentioned regions are formed through diffusion. Injector terminal IS is attached to region 13a and 13b each; input terminal G1 and G2 are attached to region 13c and 13d; and output terminal D is attached to region 14 respectively. And a lateral PNP transistor is constituted with region 13a and 13c, layer 12, region 13d and 13b plus layer 12 to be used for the contant current source. Furthermore, the switching element featuring the similar function to FET is formed with region 14 plus divided region 13c and 13d. Thus, the two-input NOR function can be obtained at the swiching element with terminal G1 and G2 used as the input terminals plus terminal D used as the output terminal restpectively. |
