| 摘要 |
PURPOSE:To decrease the loss of the raw material as well as to reduce the energy necessary for production for the Si semiconductor used for the solar battery by producing the plate-type Si semiconductor containing the dense poly-crystal layer on its surface via the eutectic reaction between Si and the low fusing point metal. CONSTITUTION:The pressure molding is given to the Si powder, and then Al film 2 is sticked on porous plate-type Si surface 1 which if formed by heating and sintering the molded substance of the Si powder to form the Al-Si eutectic liquid layer on th surface. Then silicon crystal 4 is deposited from eutectic liquid layer 3 by cooling the layer starting at one end. In this way, the plate-type Si semiconductor containing the dense poly-crystal layer on the surface of the porous plate-type Si can be produced with a low cost. Owing to the poly-crystal layer featuring the dense surface, it is used as the substrate to grow the Si thin film via the vapor growing method. Then the P-N junction is given to produce the solar battery. |
