| 摘要 |
PURPOSE:To achieve superb wavelength selectivity and allow high-brightness ultraviolet rays to emit light highly efficiently by laminating II-VI compound semiconductor conductive layer, light-emitting layer, a current injection layer in sequence by epitaxial growth on a crystal substrate of II-VI compound semiconductor crystal substrate. CONSTITUTION:A II-VI compound semiconductor conductive layer 12, a light- emitting layer 13, a current injection layer 14 are laminated in sequence on a crystal substrate 11 of II-VI compound semiconductor by epitaxial growth. For example, an n-type ZnS conductive layer 12, an n-type ZnS light-emitting layer 13, and an ultra-violet rays light transmission type ZnS high-resistance current injection layer 14 are laminated in sequence by epitaxial growth. Then, a metal electrode 15 forming a negative pole is placed on the n-type ZnS single crystal substrate 11 and a metal electrode 16 for injecting current is placed at the ZnS high resistance current injection layer 14, Also, the metal electrode 16 for injecting current and the ZnS high resistance current injection layer 14 are covered with ultraviolet rays transmission protection film 17 except the connection terminal part of the metal electrode 16. |
