| 摘要 |
PURPOSE:To carry out formation of the junction and then formation of electrode in one process by forming the eutectic liquid layer of aluminum-silicon on the silicon substrate. CONSTITUTION:The aluminum is deposited on n-type silicon substrate 1 to have the eutectic reaction growth. The silicon crystal growth layer and the aluminum surface layer formed through the solidification of the eutectic liquid layer are shown by 2' and 3' respectively. The aluminum layer on the surface is removed with grid- type electrode part 4, remaining. |
