| 摘要 |
1,114,362. Semiconductor devices INTERNATIONAL STANDARD ELECTRIC CORPORATION. 7 April, 1966 [22 April, 1965] No. 15567/66. Heading H1K. In a junction transistor having the emitter, base and collector regions extending to one surface of the body, the emitter region comprises a plurality of separate areas and the surface of the body is covered with an insulating layer having apertures through which the emitter areas and the areas of the base region between the emitter areas may be contacted by conductive layers. As shown, Figs. 1 and 2, a silicon dioxide masking layer 6 is thermally produced on the surface of an N-type silicon wafer 10, acceptor impurities are diffused-in to form P-type base region 2 which is substantially in the form of a square annulus, the oxide layer is reformed, and phosphorus is diffused in from a P 2 O 6 source to form a plurality of strip-like emitter areas 1. The oxide layer is reformed and strips are removed over each of the emitter areas 1 and over the areas of the base region lying between the emitter areas. Aluminium is deposited over the surface and masked and etched to form interdigitated emitter electrode 3 and base electrode 4. A plurality of such devices may be simultaneously produced in a single wafer which may be subdivided by scribing and breaking or by ultra-sonic machining. As shown in Fig. 2, collector region 10 extends to the surface of the wafer in the centre of the base region where it is covered by oxide layer 6 and the central part of the base electrode 4 to which a lead-wire may be bonded. This arrangement reduces the base-collector junction area and hence the base-collector capacitance. The capacitance between the central part of the collector region and the overlying base electrode 4 may be reduced by forming a screening region (not shown) of the same conductivity type as the base region below the oxide. This screening region may be left floating or may be provided with an electrode for biasing purposes. In a further embodiment, Fig. 3 (not shown), the base region is a circular annulus and the emitter areas are in the form of sectors. In a modification of this embodiment, Fig. 4 (not shown), each sector is divided into a plurality of curved strips. The base and emitter leads may comprise the inner and outer conductors respectively of a co-axial cable, the connections to the electrode layers being effected by means of pressure contacts. |
