SEMICONDUCTOR DEVICE MANUFACTURE

摘要

Manufacture of a semiconductor mesa device such as a TRAPATT diode using etching techniques. The mesa is first formed on a higher conductivity substrate by etching through an epitaxial layer, after which the mesa is undercut and given a positive bevel by further etching. The whole etching process may be effected by gas plasma etching, or the bevelling may be effected by electrolytic etching. Shadow masking by the bevelled side of the mesa can be used during implantation in and contacting of the mesa. A Si3N4 etchant mask on the epitaxial layer can also protect during oxidation to passivate the mesa side faces. Figure 3 is suitable for publication.