| 发明名称 |
COMPOSITE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION |
| 摘要 |
<p>COMPOSITE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATION An improved composite channel field effect transistor and method of fabrication, which exhibits high density characteristics and yields high performance with less sensivity to threshold shift due to hot electrons when operated at high source to drain voltage levels.</p> |
| 申请公布号 |
CA1057418(A) |
申请公布日期 |
1979.06.26 |
| 申请号 |
CA19760268530 |
申请日期 |
1976.12.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HO, IRVING T.;RISEMAN, JACOB |
| 分类号 |
H01L21/265;H01L29/10;H01L29/78;(IPC1-7):01L29/78;01L21/70;01L29/34 |
主分类号 |
H01L21/265 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
