| 摘要 |
<p>PURPOSE:To eliminate the storage effect of the diode after writing and thus to ensure the high-speed operation by jointing the Schottky barrier diode and the PN- junction diode in the contrary directions to each other and then breaks the junction of the diode at one side. CONSTITUTION:ScHOTTKy barrier diode 16 is formed between the surface of epitaxial layer 13 and electrode A formed on semiconductor substrate 11, and the diode of PN-junction 17 is formed between layer 13 and base region 15. In such P- ROM memory cell, the writing pulse is applied to turn electrode A positive and electrode B negative respectively, and thus diode 16 is set forward. Then the backward voltage is applied to junction 17 between layer 13 and base region 15 to break junction 17 down. And only one unit of Schottky barrier diode 10 is left equivalently as the memory cell after writing. As a reult, the storage effect cansing the delay of the memory cell at the switching time can be eliminated, thus ensuring a high- speed operation.</p> |
