发明名称 PREPARATION OF VOLTAGE NONNLINEAR RESISTOR
摘要 <p>PURPOSE:To form a composition with improved pulse life property, surge durability, and alpha in the increased current range comprising a glass frit consisting of Bi2O3, SiO2, B2O3, CoO, and AgO, and Bi2O3 and CoO-MnO2-NiO added ZnO. CONSTITUTION:Adding 2 to 30 parts by weight of CoO and 2 to 30 parts by weight of AgO to 100 parts by weight of a composition consisting of 40 to 90% by weight of Bi2O3, 5 to 10% by weight of SiO2, and 5 to 20% by weight of B2O3, melting the mixture at 1000 to 1200 deg.C, quenching it, and reducing to fine powder to form a glass frit. Adding 0.05 to 10 parts by weight of this glass frit to 100 part by weight of varister compostion which is prepared by adding 0.01 to 10mol% of Bi2O3, CoO, MnO2 and NiO respectively to Zno, mixing, molding, and baking at 1100 to 1400 deg.C to obtain a sintered disc. Providing electrodes on both sides of the disc by evaporating, silver paint coating, or metal spraying.</p>
申请公布号 JPS5479493(A) 申请公布日期 1979.06.25
申请号 JP19770147447 申请日期 1977.12.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 WAKAHATA YASUO;TOYOMI TAKAYOSHI;HASHIZUME TAIZOU;ISHIZAKA SEIJI
分类号 H01C7/10;C04B35/00;C04B35/453 主分类号 H01C7/10
代理机构 代理人
主权项
地址