| 摘要 |
PURPOSE:To obtain a memory system which can superpose and store different information in an element by storing information while making the desired element in the desired pattern on the surface of a substrate, by scanning on the surface by charged particle beams, and by reading out information over an energy analysis of generated secondary beams. CONSTITUTION:Into memory substrate 1 employing a Si single-crystal substrate, B ions are implanted as wide as the fixed area at the fixed potnetial via the mask previosuly supplied with required information, and P ions are also implanted as wide as the fixed area at the fixed potential via the mask stored with another information. In addition, the region where no ion is implanted and the region where both B and P ions are implanted are formed, so that one memory substrate 1 will be stored with four kinds of information. At a read time, focusing electron beam 2 is caused to strike memory substrate 1 and to scan on it and secondary electron 3 characteristic to the element generated through this irradiation is detected by coaxial mirror type electron energy analyzer 4, thereby reading out different information. |
