| 摘要 |
PURPOSE:To enhance the durability of each chip electrode of a bare electrode by extremely reducing the corrosion thereof by selectively applying bias voltage to each chip electrode by subjecting a photoconductor layer to scanning exposure due to arbitrary light to directly form an electrostatic latent image to a member to be charged. CONSTITUTION:When a photoconductor layer 16 is subjected to scanning exposure due to the light corresponding to an image data signal in an image exposure part not shown in a drawing, the resistance value of the part irradiated with light of the photoconductor layer 16 is lowered and bias voltage is divided to be applied only to each bare electrode 13 adjacent to the photoconductor layer 16 irradiated with light and an electric field is formed between the electrode 13 and a member 12 to be charged and an ion having the same polarity as the bias voltage is extracted and only the extracted part of the member 2 to be charged is selectively charged to form the positive latent image corresponding to an image data light signal. When the irradiation with light is turned OFF, the dark resistance of the exposed part of the photoconductor layer 16 again becomes large and the bare electrode 13 is returned to a float state and the bare electrode 13 is immediately destaticized by the positive and negative ions formed in a discharge region 15 and the extraction of an ion is stopped. |
