| 摘要 |
PURPOSE:To achieve the simplification of production processes by growing a silicon thin film crystal layer and antimony metal solidified layer in one process and oxidizing the antimony metal solidified layer thereby forming a transparent conductive film serving also as an antireflection film. CONSTITUTION:Thinly evaporating antimony on a silicon substrate surface and increasing the substrate temperature yield a thin eutectic solution layer on the substrate surface. Folowing to this, silicon deposits at the interface of the eutectic solution layer and substrate, growing a silicon thin film crystal. The crystallinity of this thin film is extremely well and the thin film crystal may be readily obtained. If the supply of silicon particles is stopped before the eutectic solution layer is not exhausted to finish the growth of the silicon thin-film crystal, then the antimony metal layer containing a slight amount of silicon may be formed. This is oxidized, by which it is converted to an antimony oxide film serving both as a transparent conductive film and an antireflection film. |
