| 摘要 |
PURPOSE:To prepare a coating composition giving a p-n junction and an antireflection layer by single heat treatment, by the reaction of a dopant for forming a p-n junction with a titanic acid ester and a carboxylic acid in a solvent. CONSTITUTION:Raw material of dopant comprising an oxide such as phosphorus pentoxide, boron oxide, arsenic trioxide, etc., is made to react with a titanic acid ester and a carboxylic acid in a solvent to obtain a titanic acid-containing composition. The composition is applied to a semiconductor substrate, and the solvent is evaporated by rapid heat treatment to form a titanium oxide layer containing P, B, As, etc. as impurity diffusion source. The impurity is diffused into the semiconductor substrate by keeping the substrate at a high temperature in an inert gas atmosphere, to form a diffusion layer having an inversed electric conductivity. A titanium oxide layer which acts as an antireflection layer, and a p-n junction are simultaneously formed by this process. |
