| 摘要 |
A method for forming an aluminum interconnect structure on an integrated circuit chip which method employs the anodization of the aluminum but eliminates the necessity for the formation of a hard anodic barrier on the aluminum. Furthermore, the technique provides a superior "cold via" contact. A layer of tantalum is placed over an aluminum layer which tantalum is patterned to define the desired aluminum interconnect structure. Both the exposed aluminum and the tantalum are anodized to form both the interconnect structure and a thin layer of anodic tantalum which is then removed.
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