| 摘要 |
PURPOSE:To obtain a minute pattern suitable for magnetic bubble elements and semiconductor devices by using polymethyl isopropenyl ketone as a photo resistor and generating a photochemical reaction by ultraviolet rays having a wavelength shorter than normal ultraviolet rays and performing ion-etching after development. CONSTITUTION:A Permalloy film where a pattern will be formed is caused to adhere onto a magnetic garnet film through a SiO2 film, and a polymethyl isopropenyl ketone film is applied onto this film and is subjected to pre-bake at 170 deg.C for about 20 minutes. Next, a mask of a chromium film which is caused to adhere onto a quartz glass plate, which does not absorb short-wavelength ultraviolet rays, in a prescribed pattern is used to perform a contact printing exposure for a minute by a Xe-Hg lamp light source. After that, the irradiated part of the ketone film is developed and removed, and the exposed Permalloy film is subjected to ion-milling and is made into a desired pattern. Thus, even a minute pattern with line width 0.5mum can be obtained. |
