| 摘要 |
PURPOSE:To make a shift register high-speed by injecting beforehand impurity, which functions as a charge generation center, only under the transfer electrode near an input part and generating always fixed-quantity charge from this center and using this charge as facet zero charge. CONSTITUTION:Transfer electrodes 3, 4 and 5 are formed near one another through gate insulating film 2 on P-type Si substrate 1, thereby constituting a transfer capacitor group. Meanwhile, input gate 11 is provided at the edge of film 2, and input PN junction element 13 is formed adjacently to gate 11 in substrate 1, and output PN junction element 14 is provided adjacently to the last transfer capacitor 5. In the shift register constituted in this manner, charge generation center 19 using Be, Ce, Ir, etc., is arranged only under the first electrode 3. Thus, when input gate 11 has become an on-state, the facet zero charge from center 19 is superposed onto the injected signal charge and they become transferred charge, so that the charge can be prevented from remaining to be taken out. |
