| 摘要 |
PURPOSE:To relax a dielectric strength limitation to make the amplification of signals of a short repeated period possible, by grounding the connection point of the same conductive-type MOSFETs, which are connected longwise, through a resistance in a class-''B'' PP amplifier circuit. CONSTITUTION:In the class-''B'' PP which has load 3, power source 4 and signal source 6, and has N channel-type 1 and 1' and P channel-type 2 and 2' of enhancement-type MOSFETs connected longwise, the connection point between the source of MOSFET 1 and the drain of 1' is grounded through resistance 11, and the connection point between the source of MOSFET 2 and the drain of 2' is grounded through resistance 12. If resistance 11 is defined as a value which is sufficiently smaller than the resistance between the source and the drain in the cut-off state of MOSFETs 1 and 1', the discharge of the capacity between the gate and the source of MOSFET 1 is performed through the sum of the parallel resistance value of resistances 7 and 8 and resistance 11, and the discharge time is considerably shortened, and the voltage which is transitionally applied between the drain and the source of MOSFET 1' is only the power source voltage. The same operation is performed in the side of MOSFET 2 and 2'. |
