ELECTRON BEAM RESIST

摘要

The invention relates to a negative electron resist for application in electron lithography. It consists of an organic copolymer formed by copolymerization of butadiene or isoprene with glycidyl acrylate or glycidyl methacrylate. The resist exhibits the high sensitivity to irradiation by electrons and, at the same time, a good adhesion to the base and a resistance towards common etching agents. The copolymer is advantageously prepared by radical polymerization and a high purity of the product does not require further purification. The electron resist manufactured in this way has the long-term workability.