| 摘要 |
PURPOSE:To uniformly form a thin film in large area by a plasma CVD method at the atmospheric pressure by diluting a gaseous raw material with He and providing a high resistor on an electrode plate and specifying both the distance between a base plate and the electrode plate and the flow rate of gas supplied to a discharge space. CONSTITUTION:A high resistor 4 having >=10<11>OMEGAcm resistivity is provided on at least one of the opposed faces of the counter electrodes 2, 3 in a film formation chamber 1. The distance between a base plate 5 and the electrode 2 (3) or between the base plate 5 and the high resistor 4 is regulated to 10-0.1mm. A gaseous mixture of both gas for forming a film and He is supplied to a discharge space so that Q/S value obtained by dividing flow rate Q of gas with volume S of the discharge space is regulated to 1-10<2>sec<-1>. High-frequency voltage is impressed to the counter electrodes 2, 3 in the vicinity of the atmospheric pressure to cause glow discharge and a thin film is formed on the base plate 5. Thereby the thin film made of a-Si and TiN, etc., can be uniformly formed in the vicinity of the atmospheric pressure. |
