| 摘要 |
PURPOSE:To obtain a luminous element which features the light emission over a wide wavelength range, by sticking the luminous material on the semiconductor substrate of a narrow band gap to cause a high field region on the surface of the substrate and then giving the energy more than the energy barrier to secure the light emission. CONSTITUTION:Reverse conduction-type region 1 featuring a narrow band gap is formed through diffusion on uniconduction-type semiconductor substrate 5, and insulator film 2 is coated on the entire surface. The opening is then provided to film 2 positioned on region 1, and luminous material 3 featuring a wider energy gap than region 1 is coated on the surface of exposed region 1 to form light transmissible conductive gate 4 on the surface. The pulse bias featuring the quick rise, with which no minor carrier is stored on the surface, is applied between region 1 and gate 4. Thus, the high field region is caused on the surface of region 1, and the accelerated carrier enters within layer 3 going over the energy barrier to cause the light emission. Thus, the element array featuring the different luminous colors can be formed on the same substrate. |
