| 摘要 |
PURPOSE:To enable to operate with good efficiency for the light within a broad wave length region, by placing the chalcopylite semiconductor layer on the chalcopylite semiconductor substrate. CONSTITUTION:On the chalcopylite semiconductor substrate 1, the calcopylite semiconductor layers 2 to 4 are laminated, and the combination between the substrate 1 and the semiconductor layers 2 to 4 is either one of the following: (A), the substrate is ZnSiAs2 and the semiconductor layer is Zn1-xGdxSi1-yGeyP2(1-z)As2z obtained with epitaxial growing method (B), substrate is CdGeP2 and semiconductor layer is Zn1-xCdxSi1-yGeyP2(1-z)As2z obtained with epitaxial growing method, (C), substrate is CuAlSe2 and semiconductor layer is Cu1-xAgxAl1-yGayS2(1-z)Se2z obtained from epitaxial growing method, (D), substrate is AgGaS2 and semiconductor layer is Cu1-xAgxAl1-yGayS2(1-z)Se2zo obtained from epitaxial growing method. |
