| 摘要 |
A semiconductor device having an exposed surface area of a P-N junction is coated with glass 16. The glass comprises 63-69% by weight of ZnO and 20-30% by weight of B2O3 with the sum of ZnO and B2O3 being no less than 86% and a balance of SiO2, and the surface charge density of the glass is within the range between -3 x 10<11> + 3 x 10<11> cm<-2>. The semiconductor device shows a small leakage current and no risk of reduction of breakdown voltage. The coefficient of thermal expansion of the glass is 25-50. 10-<7>/<0>C and its thickness is at least 10 microns. <IMAGE> |
