发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 i) exhaustion gas path (25); ii) injection part (26) inducing growth solution (37,38) to a crystal substrate; iii) an enclosed material (21) having an outlet (27) to eliminate the growth solution after reaction; iv) a rotatory material (22) which passes through the (21) in which a substrate setting tool (30), growth solution injection path (31), and outlet (28) are included; v) solution bath (32); and vi) waste solution bath (36).
申请公布号 KR900001662(B1) 申请公布日期 1990.03.17
申请号 KR19860005078 申请日期 1986.06.25
申请人 TOSHIBA CORP 发明人 UEKI YUGIRO
分类号 H01L21/208;H01L21/28;H01L33/30;(IPC1-7):H01L21/208 主分类号 H01L21/208
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