| 摘要 |
PURPOSE:To remarkably simplify the number of processes for element formation, by etching the overcoat metal electrode for the ZnO peizoelectric film as a resist. CONSTITUTION:Au is evaporated on the glass substrate 1 entirely, and the interdigital electrodes 2a to 3d are formed with etching by photo lingergraphic, the XnO film 3a(3b) is entirely attached on it, and Au as the overcoat metal electrodes 4a, 4b is formed by adjusting with the metal mask in advance so that the pattern is formed only for the required part. By taking this electrode as a resist, etching is made with the ZnO etching solution taking phosphoric acid or hydrochloric acid as major constituent by leaving only the lower part of the electrodes 4a and 4b. Accordingly, no photo lingergraphic technology is required to etch ZnO and the forming process can remarkably be simplified. |
