| 摘要 |
PURPOSE:To continuously mass-produce beta-type SiC crystals of uniform diameter in a high yield by stable and full-automatic operation, by charging raw materials into a preheating zone after which they are dropped through a heating zone at a predetermined speed and further dropped through a cooling zone. CONSTITUTION:The apparatus is composed of raw mateial charge inlet 1, preheating zone 2, heating zone 3, cooling zone 4 and discharge outlet 5 connected lengthwise. Heating zone 3 is graphite cylinder surrounded by graphite heating element 6 and element 6 is enclosed with graphite reflective tube 7. Reactor 9 is provided with discharge outlet 5 having discharge means 9. Raw materials for beta-type silicon carbide are continuously or intermitterntly charged from inlet 1 into the upper part of zone 2 and preheated. While the raw materials are falling through zone 3 at a predetermined speed by means of dead load, they are indirectly heated with element 6 to be converted into SiC, which is then cooled while it is falling through zone 4. The reaction product is continuously or intermittently discharged 8. |
