| 摘要 |
<p>PURPOSE:To improve mass-producibility with manufacture simplified by covering the entire surface of a semiconductor substrate with an insulating film after a plural number of grooves are formed in its surface, by diffusion-forming a light-reception diode on its flank surface exposed by removing the film of the groove flank, and then by pelletizing substrate by cutting off it at the center of the groove. CONSTITUTION:On P-type Si substrate 4, SiO2 film 5 is adherd and made into stripes by a photo-lithograpy method, which is used as a mask for etching to provide a plural number of concave grooves 6 in the surface of substrate 4. Next, film 5 is removed, SiO2 film 7 is adhered to the entire surface again, and film 7 on the flank surface of groove 6 is selectively etched and removed. On this flank surface exposed, N-type region 8 is diffusion-formed to obtain the light-reception diode which becomes a photo detector. Next, region 8 is fitted with N-type electrode 9, P- type electrode 10 is also fitted where film 7 on the bottom surface of groove 6 used as the mask at the time of forming region 8 is removed, and P-type electrode 11 is fitted to the reverse surface of substrate 4. Then, the substrate is pelletized by being cut off at the center part of groove 6.</p> |
