| 摘要 |
PURPOSE:To obtain a hysteresis circuit using a small number of constituting elements, by changing the impedance of a complementary MOS by connecting P and N channel MOS transistors in parallel to an inverter circuit composed of the complementary MOS transistor. CONSTITUTION:This hysteresis circuit consists of inverter circuit 11 composed of a complementary MOS transistor, the 2nd complementary circuit composed of MOSTP2 and MOSTN2 connected in parallel to circuit 11, and the switching method which makes either 2nd complementary MOS conduct corresponding to the output level of inverter 11. This switching method employs complementary inverter 12, and makes its switching using the threshold potential of inverter 12. Solid lines A and B represent characteristics at the time when either TP2 or TN2 conducts, and they are nearly oval hysteresis characteristics, by more excellent hysteresis characteristics can be obtained through the waveform shaping of inverter 12. |
