| 摘要 |
1288586 Semi-conductor device; printed circuits PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 24 Nov 1969 [27 Nov 1968] 57344/69 Headings H1K and H1R A semi-conductor device comprises a body of semi-conductor material in which at least one circuit element is formed, a plurality of contact surfaces being present adjacent one side of the body and forming conductive connections to the element, and an insulative substrate having adjacent one side a pattern of conductive tracks which are separated from the substrate surface by a layer of the same semi-conductor material as the body, the body being mounted with the one side thereof adjacent the one side of the substrate with the contact surfaces and tracks connected. A substrate 1 of Al 2 O 3 or glass has a layer 2 of Si epitaxially deposited thereon and a vacuum deposited layer 3 of Al. The layer of Al is formed as a pattern of tracks and the exposed areas of Si etched away. A semi-conductor device 6 is bonded to the tracks 3 by thermocompression bonding or ultrasonically as are the aluminium conductors 4. In a modification, the Si layer 2 has dope regions formed therein to provide e.g. resistors or capacitors, before the deposition of layer 3 and layer 3 provides contacts to these regions. In another, a Ge transistor is mounted on a substrate with a layer of Ge under the tracks. The presence of the semiconductor layer is said to overcome thermal expansion problems. |
