STYRBAR HALVLEDARLIKRIKTARE

摘要

1421146 Semi-conductor devices SEMIKRON GES FUR GLEICHRICHTERBAU UND ELEKTRONIK mbH 20 Dec 1972 [24 Dec 1971] 58839/72 Heading H1K In a shorted-emitter thyristor one of the inner regions 1 extends through the emitter region 2 to the contacted upper surface in a pattern which includes a plurality of interconnected bars 4 occupying only a small proportion (preferably 2-5%) of the surface area of the emitter region 2. Several alternative patterns are disclosed. The region 1 is also contacted at the upper surface by the control electrode 3. The invention is applicable to thyristors having four or more layers of alternate conductivity types.