| 摘要 |
<p>A semiconductor device comprising a semiconductor element (102), a ceramic substrate (101) a ceramic frame (105) and a cover (106). One side of a penetrating opening of the ceramic substrate (101) is covered with highly thermally conductive metal plate (100) which is a laminated unit of a molybdenum plate (111) with a flexible metal plate (109). The semiconductor element (102) is loaded through a molybdenum plate (110) onto the lowest part of the depression formed by one face of the flexible metal plate (109) and the inside walls of the penetrating opening. Radiators (107, 108) are fixed to the side opposite to where the semiconductor element (102) is loaded. </p> |
