| 摘要 |
PURPOSE:To obtain the output voltage of high potential with the input signal of low voltage, by constituting C-MOS inverter circuit with MOSFET of P and N channel, further providing N channel MOSFET and applying the input signal of opposite phase to the gate. CONSTITUTION:C-MOS circuit is constituted with the P channel MOSFET T21 200V or more in dielectric strength and the N channel MOSFET T22 having the same breakdown voltage. Further, branching resistors R21 and R22 are provided, the junction point is connected to the gate of the element T21, and one end is connected to the gate of the element T22 via the inverter INV consisting of C-MOS via the N channel MOSFET T23. With this constitution, the power supply VDD is applied to the element T21 and the resistor R21, and when the input VIN is fed to the element T23 and the inverter INV, high voltage output signal having opposite phase as the input signal is appeared at the output Vout. |
