| 摘要 |
<p>PURPOSE:To form CrB2 thin membrane resistor having a wide specific resistance range, a small resistance temperature coefficient, high thermal stability, and a high stability under varying environmetal conditions, e.g., temperature change with time, etc. CONSTITUTION:The base plate is provided with a CrB2 thin membrane by an electronic beam deposition, a sputtering method, etc., having a specific resistance of 100 to 5000 ohm cm, a resistance temperature coefficient of +200 ppm/ deg.C, and a membrane thickness of 100 to 5000 A, for example. The electronic beam deposition is made under a vacuum condition using powdered CrB2 tablets. And, the sputtering method is made either by using as target powdered CrB2 tablets, sintered CrB2 body molded by vacuum hot press, or B and Cr at a time in Ar gas of 10<-3> to 5 X 10<-1> Torr, or by using Cr as target in a Ar-B2 (1 to 10%) gas of 10<-2> to 5 X 10<-1> Torr. The heating of the base at 200 to 500 deg.C during membrane forming process raises the adhesiveness and stability of the membrane.</p> |
